Impact of self-heating on the statistical variability in bulk and SOI FinFETs

摘要

In this paper for the first time we study the impact\udof self-heating on the statistical variability of bulk and SOI\udFinFETs designed to meet the requirements of the 14/16nm\udtechnology node. The simulations are performed using the GSS\ud‘atomistic’ simulator GARAND using an enhanced\udelectro-thermal model that takes into account the impact of the\udfin geometry on the thermal conductivity. In the simulations we\udhave compared the statistical variability obtained from full-scale\udelectro-thermal simulations with the variability at uniform room\udtemperature and at the maximum or average temperatures\udobtained in the electro-thermal simulations. The combined effects\udof line edge roughness and metal gate granularity are taken into\udaccount. The distributions and the correlations between key\udfigures of merit including the threshold voltage, on-current,\udsubthreshold slope and leakage current are presented and\udanalysed.